V20M120M-E3 Datasheet - Vishay

V20M120M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

V20M120M-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V20M120M PI

Datasheet Details

V20M120M-E3

93.72 KB

Dual high voltage trench mos barrier schottky rectifier.

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