Part number:
V30150C
Manufacturer:
File Size:
151.85 KB
Description:
Dual high-voltage trench mos barrier schottky rectifier.
V30150C Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
Datasheet Details
V30150C
151.85 KB
Dual high-voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
V30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100PW-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30150C Distributor