VB20M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

VB20M120C Description

New Product VB20M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.55 V at IF = 5 A .

VB20M120C Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Compliant

VB20M120C Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 120 V 120 A 0.64 V 150 °C Case: TO-263AB Molding compound meets UL 94 V-0 flammability ratin

📥 Download Datasheet

VB20M120C Datasheet Preview — Preview of VB20M120C PDF

Datasheet Details

Part number: VB20M120C
Manufacturer: Vishay ↗
File Size: 654.70 KB
Datasheet: VB20M120C_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

VB2101K - P-Channel MOSFET (VBsemi)
VB2120 - P-Channel MOSFET (VBsemi)
VB2212N - P-Channel MOSFET (VBsemi)
VB2290 - P-Channel MOSFET (VBsemi)
VB2355 - P-Channel MOSFET (VBsemi)
VB2405D-1W - DC-DC CONVERTER (YUAN)
VB2405D-2W - DC-DC CONVERTER (YUAN)
VB2405S-1W - DC-DC CONVERTER (YUAN)

📌 All Tags

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay VB20M120C-like datasheet

VB20M120C-E3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20M120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20M120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB20100S - High-Voltage Trench MOS Barrier Schottky Rectifier