VB20M120C-E3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

VB20M120C-E3 Description

VB20M120C-E3, VB20M120C-M3, VB20M120CHM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra .

VB20M120C-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material c

VB20M120C-E3 Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - Ro

📥 Download Datasheet

VB20M120C-E3 Datasheet Preview — Preview of VB20M120C-E3 PDF

Datasheet Details

Part number: VB20M120C-E3
Manufacturer: Vishay ↗
File Size: 88.34 KB
Datasheet: VB20M120C-E3-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

VB2101K - P-Channel MOSFET (VBsemi)
VB2120 - P-Channel MOSFET (VBsemi)
VB2212N - P-Channel MOSFET (VBsemi)
VB2290 - P-Channel MOSFET (VBsemi)
VB2355 - P-Channel MOSFET (VBsemi)
VB2405D-1W - DC-DC CONVERTER (YUAN)
VB2405D-2W - DC-DC CONVERTER (YUAN)
VB2405S-1W - DC-DC CONVERTER (YUAN)

📌 All Tags

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay VB20M120C-E3-like datasheet

VB20M120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20M120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB20100S - High-Voltage Trench MOS Barrier Schottky Rectifier