VF10150C High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VF10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A TMBS.

📥 Download Datasheet

VF10150C Datasheet Preview — Preview of VF10150C PDF

Datasheet Specifications

Part number: VF10150C
Manufacturer: Vishay ↗
File Size: 80.44 KB
Datasheet: VF10150C_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 5.0 A 150 V 60 A VF at IF = 5.0 A 0.69 V TJ max. Package 150 °C ITO-220AB Diode variation Dual common cathode

VF10150C Distributors

📁 Related Datasheet

VF1000 VF1120 VF1220 VF16C05 VF16C10 VF16C15

📌 All Tags

VF10150C High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay VF10150C-like datasheet

VF10150S