* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3
* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Ha
VF10150S Datasheet (135.70 KB)
VF10150S
135.70 KB
High-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr
New Product
VF10150S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at I.
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