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VSMA1085600X02 High Power Infrared Emitting Diode

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Description

www.vishay.com VSMA1085600X02 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology LINKS TO ADDITIONAL RESO.
As part of the Astral portfolio, the VSMA1085600X02 is an infrared, 850 nm emitting diode.

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Datasheet Specifications

Part number
VSMA1085600X02
Manufacturer
Vishay ↗
File Size
199.49 KB
Datasheet
VSMA1085600X02-Vishay.pdf
Description
High Power Infrared Emitting Diode

Features

* a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES
* Package type: surface-mount
* Package form: high power SMD with lens
* Dimensions (L x W x H in mm): 3.4 x 3.4 x 1.8

Applications

* Driver and occupant monitoring
* Eye tracking
* Safety and security, CCTV PRODUCT SUMMARY COMPONENT VSMA1085600X02 Ie (mW/sr) at IF = 1.0 A 510 Note
* Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMA1085600X02 Note

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