* a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES
* Package type: surface-mount
* Package form: high power SMD with lens
* Dimensions (L x W x H in mm): 3.4 x 3.4 x 1.8
VSMA1085600X02 Datasheet (199.49 KB)
VSMA1085600X02
199.49 KB
High power infrared emitting diode.
www.vishay.com
VSMA1085600X02
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
LINKS TO ADDITIONAL RESO.
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