VSMA1085600X02 - High Power Infrared Emitting Diode

Vishay

Datasheet Details

Part number	VSMA1085600X02
Manufacturer	Vishay ↗
File Size	199.49 KB
Description	High Power Infrared Emitting Diode
Datasheet	VSMA1085600X02-Vishay.pdf

As part of the Astral portfolio, the VSMA1085600X02 is an infrared, 850 nm emitting diode.

a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A.

📁 VSMA1085600X02 Similar Datasheet

VSM002NE4MS-G - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM003N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM003N06HS-G - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM005NE8HS-G - 85V/124A N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM007N07MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM007P06MS - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM008N07HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM012N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)

Other Datasheets by Vishay

Published: Dec 11, 2023 |