VSMA1085600X02 Datasheet, Diode, Vishay

VSMA1085600X02 Features

  • Diode a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES
  • Package type: surface

PDF File Details

Part number:

VSMA1085600X02

Manufacturer:

Vishay ↗

File Size:

199.49kb

Download:

📄 Datasheet

Description:

High power infrared emitting diode. As part of the Astral portfolio, the VSMA1085600X02 is an infrared, 850 nm emitting diode. It features a double stack emitter chip fo

Datasheet Preview: VSMA1085600X02 📥 Download PDF (199.49kb)
Page 2 of VSMA1085600X02 Page 3 of VSMA1085600X02

VSMA1085600X02 Application

  • Applications
  • Driver and occupant monitoring
  • Eye tracking
  • Safety and security, CCTV PRODUCT SUMMARY COMPONENT VSMA108

TAGS

VSMA1085600X02
High
Power
Infrared
Emitting
Diode
Vishay

📁 Related Datasheet

VSMA1085250 - High Power Infrared Emitting Diode (Vishay)
.vishay. VSMA1085250 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology LINKS TO ADDITIONAL RESOURC.

VSMA1094250X02 - High Power Infrared Emitting Diode (Vishay)
.vishay. VSMA1094250X02 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology LINKS TO ADDITIONAL RESO.

VSM002NE4MS-G - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Test.

VSM003N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel,10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati.

VSM003N06HS-G - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel,10V Logic Level Control  Enhancement mode  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested .

VSM005NE8HS-G - 85V/124A N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  Enhancement mode  Very low on-resistance  VitoMOS® Ⅱ Technology  100% Avalanche Tested VSM005NE8HS-G 85V/124A N-Channel Advanced Power .

VSM007N07MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche Tested .

VSM007P06MS - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  P-Channel,-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested.

VSM008N07HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel,10V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=10V  Fast Switching  100% Avalanche Test  Pb-free.

VSM012N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel,Logic Level 10V  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS.

Stock and price

Vishay Semiconductors
IR SURFACE EMITTER HIGH POWER 85
DigiKey
VSMA1085600X02
645 In Stock
Qty : 100 units
Unit Price : $1.91
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts