* Very low profile - typical height of 0.95 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low power losses, high efficiency
* Low forward voltage drop
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q
VSSAF3L45 Datasheet (86.87 KB)
VSSAF3L45
86.87 KB
Surface mount trench mos barrier schottky rectifier.
www.vishay.com
VSSAF3L45
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SlimSMATM
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Bottom View
D.
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