VT1045BP Datasheet - Vishay

VT1045BP Trench MOS Barrier Schottky Rectifier

VT1045BP Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS Directive 2011/65/EU

* Halogen-free according to IEC 61249-2-21 definition 2 1

Datasheet Details

VT1045BP

171.05 KB

Trench mos barrier schottky rectifier.

📁 Related Datasheet

VT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT1045CBP Trench MOS Barrier Schottky Rectifier (Vishay)

VT1000 (VT1000 - VT1500) High Voltage 50mA Silicon Rectifiers (Electronic Devices)

VT102 Velocity and Temperature Output in One Sensor (CTC)

VT102-1D Velocity and Temperature Output in One Sensor (CTC)

VT102-2D Velocity and Temperature Output in One Sensor (CTC)

VT102-3D Velocity and Temperature Output in One Sensor (CTC)

VT10200C Trench MOS Barrier Schottky Rectifier (Vishay)

VT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)

VT10200C-M3 Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VT1045BP Trench MOS Barrier Schottky Rectifier Vishay

Image Gallery

VT1045BP Distributor