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VT1045BP Trench MOS Barrier Schottky Rectifier

VT1045BP Description

VT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V.

VT1045BP Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2011/65/EU
* Halogen-free according to IEC 61249-2-21 definition 2 1

VT1045BP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. CASE MECHANICAL DATA PRIMARY CHARACTERISTCS IF(DC) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max. (DC forward current) 10 A 45 V 100 A 0.52 V 150 °C 200 °C Case: TO-220AC Mold

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Datasheet Details

Part number
VT1045BP
Manufacturer
Vishay ↗
File Size
171.05 KB
Datasheet
VT1045BP_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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