VT10200C-E3 Datasheet - Vishay

VT10200C-E3 Trench MOS Barrier Schottky Rectifier

VT10200C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-22

Datasheet Details

VT10200C-E3

154.89 KB

Trench mos barrier schottky rectifier.

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