Datasheet4U Logo Datasheet4U.com

VT1045CBP

Trench MOS Barrier Schottky Rectifier

VT1045CBP Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 3

* Halogen-free

VT1045CBP Datasheet (178.41 KB)

Preview of VT1045CBP PDF

Datasheet Details

Part number:

VT1045CBP

Manufacturer:

Vishay ↗

File Size:

178.41 KB

Description:

Trench mos barrier schottky rectifier.
New Product VT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V a.

📁 Related Datasheet

VT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT1045BP Trench MOS Barrier Schottky Rectifier (Vishay)

VT1000 (VT1000 - VT1500) High Voltage 50mA Silicon Rectifiers (Electronic Devices)

VT102 Velocity and Temperature Output in One Sensor (CTC)

VT102-1D Velocity and Temperature Output in One Sensor (CTC)

VT102-2D Velocity and Temperature Output in One Sensor (CTC)

VT102-3D Velocity and Temperature Output in One Sensor (CTC)

VT10200C Trench MOS Barrier Schottky Rectifier (Vishay)

VT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)

VT10200C-M3 Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VT1045CBP Trench MOS Barrier Schottky Rectifier Vishay

Image Gallery

VT1045CBP Datasheet Preview Page 2 VT1045CBP Datasheet Preview Page 3

VT1045CBP Distributor