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VT1045CBP Trench MOS Barrier Schottky Rectifier

VT1045CBP Description

New Product VT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V a.

VT1045CBP Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 3
* Halogen-free

VT1045CBP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TOP max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammabili

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Datasheet Details

Part number
VT1045CBP
Manufacturer
Vishay ↗
File Size
178.41 KB
Datasheet
VT1045CBP_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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