* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VT10200C 3
VT10200C-M3 Datasheet (120.46 KB)
VT10200C-M3
120.46 KB
Trench mos barrier schottky rectifier.
www.vishay.com
VT10200C-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TMBS ®
TO-220AB
.
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