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VT1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VT1060C Description

www.DataSheet.co.kr New Product VT1060C, VIT1060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF.

VT1060C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT1060C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT1060C PIN 1 PIN 3 2 3 1

VT1060C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 60 V 100 A 0.50 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound

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Datasheet Details

Part number
VT1060C
Manufacturer
Vishay ↗
File Size
188.00 KB
Datasheet
VT1060C_Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VT1060C-like datasheet