* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT1060C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT1060C PIN 1 PIN 3 2 3 1
VT1060C
188.00 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VT1060C, VIT1060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF.
📁 Related Datasheet
VT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT1000 (VT1000 - VT1500) High Voltage 50mA Silicon Rectifiers (Electronic Devices)
VT102 Velocity and Temperature Output in One Sensor (CTC)
VT102-1D Velocity and Temperature Output in One Sensor (CTC)
VT102-2D Velocity and Temperature Output in One Sensor (CTC)
VT102-3D Velocity and Temperature Output in One Sensor (CTC)
VT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
VT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VT10200C-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
VT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
