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VT1080C Dual Trench MOS Barrier Schottky Rectifier

VT1080C Description

New Product VT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A TMBS ® TO-22.

VT1080C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT1080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT1080C PIN 1 PIN 3 2 3 1

VT1080C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5 A TJ max. 2x5A 80 V 80 A 0.57 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets U

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Datasheet Details

Part number
VT1080C
Manufacturer
Vishay ↗
File Size
188.38 KB
Datasheet
VT1080C_Vishay.pdf
Description
Dual Trench MOS Barrier Schottky Rectifier

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Dual Trench MOS Barrier Schottky Rectifier Vishay
Vishay VT1080C-like datasheet