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VT1080S Trench MOS Barrier Schottky Rectifier

VT1080S Description

www.vishay.com VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMB.

VT1080S Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

VT1080S Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 80 V IFSM 100 A VF at IF = 10 A TJ max. 0.60 V 150 °C Package TO-220AB, TO-262AA Diode variation Single MECH

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Datasheet Details

Part number
VT1080S
Manufacturer
Vishay ↗
File Size
139.67 KB
Datasheet
VT1080S_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
Vishay VT1080S-like datasheet