* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
VT1080S
139.67 KB
Trench mos barrier schottky rectifier.
www.vishay.com VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMB.
📁 Related Datasheet
VT1080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VT1080S-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VT1000 (VT1000 - VT1500) High Voltage 50mA Silicon Rectifiers (Electronic Devices)
VT102 Velocity and Temperature Output in One Sensor (CTC)
VT102-1D Velocity and Temperature Output in One Sensor (CTC)
VT102-2D Velocity and Temperature Output in One Sensor (CTC)
VT102-3D Velocity and Temperature Output in One Sensor (CTC)
VT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
VT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VT10200C-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
