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VT30L60C Dual Trench MOS Barrier Schottky Rectifier

VT30L60C Description

www.DataSheet.co.kr New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V a.

VT30L60C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 VT30L60C PIN 1 PIN 3 PIN

VT30L60C Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 60 V 200 A 0.45 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262

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Datasheet Details

Part number
VT30L60C
Manufacturer
Vishay ↗
File Size
187.15 KB
Datasheet
VT30L60C_Vishay.pdf
Description
Dual Trench MOS Barrier Schottky Rectifier

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Dual Trench MOS Barrier Schottky Rectifier Vishay
Vishay VT30L60C-like datasheet