* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 VT30L60C PIN 1 PIN 3 PIN
VT30L60C Datasheet (187.15 KB)
VT30L60C
187.15 KB
Dual trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V a.
📁 Related Datasheet
VT300 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT300CT Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT3045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3045CBP Trench MOS Barrier Schottky Rectifier (Vishay)
VT3045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
