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TSHG5510 High Speed Infrared Emitting Diode

TSHG5510 Description

www.vishay.com TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 21061 .
TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, unti.

TSHG5510 Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Leads with stand-off
* Peak wavelength: λp = 830 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ϕ = ± 38°

TSHG5510 Applications

* Infrared radiation source for operation with CMOS cameras (illumination)
* High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG5510 Ie (mW/sr) 32 Note
* Test conditions see table “Basic Characteristics“ ϕ (deg) ± 38 λp (nm) 830 tr (ns) 15 ORDERING INFORMATI

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High Speed Infrared Emitting Diode Vishay Siliconix
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