Datasheet4U Logo Datasheet4U.com

1SS184 DIODE

1SS184 Description

RoHS 1SS184 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE D.

1SS184 Features

* TPower dissipation PD : 150 mW (Tamb=25oC) . ,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:B3 2.9 1.9 0.95 0.95 0.4 Unit:mm TRELECTRICAL CHARACTERISTICS o C(Ta=25 C unle

📥 Download Datasheet

Preview of 1SS184 PDF
datasheet Preview Page 2

Datasheet Details

Part number
1SS184
Manufacturer
WEJ
File Size
73.14 KB
Datasheet
1SS184-WEJ.pdf
Description
DIODE

📁 Related Datasheet

  • 1SS181 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
  • 1SS187 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
  • 1SS101 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
  • 1SS104 - SILICON DIODE (Toshiba Semiconductor)
  • 1SS106 - SILICON SCHOTTKY BARRIER DIODE (SEMTECH)
  • 1SS108 - Silicon Schottky Barrier Diode (Hitachi Semiconductor)
  • 1SS110 - Silicon Diode (Hitachi Semiconductor)
  • 1SS118 - Silicon Epitaxial Planar Diode (Hitachi Semiconductor)

📌 All Tags

WEJ 1SS184-like datasheet