Datasheet Specifications
- Part number
- 2SD999
- Manufacturer
- WEJ
- File Size
- 207.36 KB
- Datasheet
- 2SD999-WEJ.pdf
- Description
- NPN EPITAXIAL SILICON TRANSISTOR
Description
RoHS 2SD999 2SD999 TRANSISTOR (NPN) .
Features
* Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A . ,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise spe2SD999 Distributors
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