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2SD999

NPN EPITAXIAL SILICON TRANSISTOR

2SD999 Features

* Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A .,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise spe

2SD999 Datasheet (207.36 KB)

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Datasheet Details

Part number:

2SD999

Manufacturer:

WEJ

File Size:

207.36 KB

Description:

Npn epitaxial silicon transistor.

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2SD999 NPN EPITAXIAL SILICON TRANSISTOR WEJ

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