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2SD999 NPN EPITAXIAL SILICON TRANSISTOR

2SD999 Description

RoHS 2SD999 2SD999 TRANSISTOR (NPN) .

2SD999 Features

* Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A . ,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise spe

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Datasheet Details

Part number
2SD999
Manufacturer
WEJ
File Size
207.36 KB
Datasheet
2SD999-WEJ.pdf
Description
NPN EPITAXIAL SILICON TRANSISTOR

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NPN EPITAXIAL SILICON TRANSISTOR WEJ
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