* Batch process design, excellent power dissipation offers TRANSbISetTteOr rRev(ePrsNePle)akage current and thermal resistance. FEATU
* RLoEwSprofile surface mounted application in order to z optimize board space. Po
* wLoewr pTorwaenrsliosstso,rhigh efficiency. z H
2SB1260
WILLAS
445.20 KB
Plastic-encapsulate transistors.
WILLAS
SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE
FM120-M+ 2SB1260 THRU
FM1200.
📁 Related Datasheet
2SB1260 - Power Transistor
(Rohm)
2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suit.
2SB1260 - Power Transistor
(GME)
Power Transistor(-80V,-1A)
FEATURES
z High breakdown voltage and high current. BVCEO=-80V,IC=-1A
z Good hFEVLinearity. z Low VCE(sat). z Complements .
2SB1260 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
• High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complem.
2SB1260 - PNP Transistor
(JinYu)
2SB1 260
TRANSISTOR(PNP)
SOT-89-3L
FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements .
2SB1260 - PNP Transistors
(Kexin)
SMD Type
Power Transistor 2SB1260
Features
High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial p.
2SB1260 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1260 TRANSISTOR (PNP)
FEATURES z Power Transistor z H.
2SB1260 - PNP Plastic Encapsulated Transistor
(SeCoS)
Elektronische Bauelemente
2SB1260
-1 A, -80 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
2SB1260 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SB1260
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.
/ Features
，，， 2SD1898 。 H.
