WNSC2M1K0170B7 - N-Channel Silicon Carbide MOSFET

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General Description

Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

Key Features

Low on-resistance.
Fast switching speed.
0V turn-off gate voltage for simple gate drive.
Easy to parallel.
100% UIS Tested.
Controllable dV/dt for optimized EMI.
Reduced cooling requirements.
RoHS compliant 3.

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WNSC2M1K0170B7 n-channel silicon carbide mosfet by WeEn - Datasheet Preview

Datasheet Details

Part number	WNSC2M1K0170B7
Manufacturer	WeEn
File Size	802.52 KB
Description	N-Channel Silicon Carbide MOSFET
Datasheet	WNSC2M1K0170B7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNSC2M1K0170B7 N-Channel Silicon Carbide MOSFET Rev.01 - 19 July 2023 Product data sheet 1. General description Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems. RoHS halogen-Free Lead-Free 2. Features and benefits • Low on-resistance • Fast switching speed • 0V turn-off gate voltage for simple gate drive • Easy to parallel • 100% UIS Tested • Controllable dV/dt for optimized EMI • Reduced cooling requirements • RoHS compliant 3. Applications • Switch Mode Power Supplies • UPS • Solar string inverter and solar optimizer • EV Charger • Motor Drives 4. Quick reference data Table 1.