2SB834 Datasheet, transistor equivalent, Weitron Technology

2SB834 Features

• Transistor
• DC Current Gain hFE = 60-200 @IC = 0.5A
• Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A
• Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1.

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2SB834

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Weitron Technology

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📄 Datasheet

Description:

Pnp silicon epitaxial power transistor.

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2SB834

Weitron Technology

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