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2SB834 - PNP Silicon Epitaxial Power Transistor

Key Features

  • DC Current Gain hFE = 60-200 @IC = 0.5A.
  • Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A.
  • Complememtary to NPN 2SD880.

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Datasheet Details

Part number 2SB834
Manufacturer Weitron Technology
File Size 225.59 KB
Description PNP Silicon Epitaxial Power Transistor
Datasheet download datasheet 2SB834 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C Symbol VCBO VCEO VEBO IC PD TJ Tstg Value -60 -60 -7.0 -3.0 1.5 30 0.