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2SB834 PNP Silicon Epitaxial Power Transistor

2SB834 Description

www.DataSheet.co.kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free .

2SB834 Features

* DC Current Gain hFE = 60-200 @IC = 0.5A
* Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A
* Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Vo

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Datasheet Details

Part number
2SB834
Manufacturer
Weitron Technology
File Size
225.59 KB
Datasheet
2SB834_WeitronTechnology.pdf
Description
PNP Silicon Epitaxial Power Transistor

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PNP Silicon Epitaxial Power Transistor Weitron Technology
Weitron Technology 2SB834-like datasheet