W3E64M72S-XBX Datasheet (White Electronic)

W3E64M72S-XBX, 64Mx72 DDR SDRAM

The 512MByte (4Gb) DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits.

Each chip is internally configured as a quad-bank DRAM.

The 512MB DDR SDRAM uses a double data rate ar chi tec ture to achieve high-speed operation.

The double data rate archit

W3E64M72S-XBX Features

* Data rate = 200, 250, 266 and 333Mbs Package:

* 219 Plastic Ball Grid Array (PBGA), 25 x 32mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#) Commands entered on each positive CK edge Internal pipelined double-data-rate (DDR) architecture; two