PFF3N80 Datasheet - Wing On

PFF3N80 N-Channel MOSFET

PFF3N80 Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3.8 Ω (Typ.) @VGS=10V APPLICATION  Low power battery charger

PFF3N80 Datasheet (1.28 MB)