PFF9N90E Datasheet - Wing On

PFF9N90E N-Channel MOSFET

PFF9N90E Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 50 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.15Ω (Typ.) @VGS=10V APPLICATION  High current, High speed

PFF9N90E Datasheet (921.83 KB)