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K2611 Silicon N-Channel MOSFET

K2611 Description

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This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.

K2611 Features

* 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
* Ultra-low Gate charge(Typical 72nC)
* Fast Switching Capability
* 100%Avalanche Tested

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Datasheet Details

Part number
K2611
Manufacturer
Winsemi
File Size
623.14 KB
Datasheet
K2611-Winsemi.pdf
Description
Silicon N-Channel MOSFET

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Silicon N-Channel MOSFET Winsemi
Winsemi K2611-like datasheet