K2600S
JIEJIE
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Sidac. The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon applica
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K2600G - Sidac
(JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd
K0900G Series Sidac
Rev.1.0
DESCRIPTION:
The sidac is a silicon bilateral voltage triggered switch with greater p.
K2600G - Axial Leaded Silicon Bilateral Voltage Triggered
(Sunmate)
K0900G - K2600G
Axial Leaded Silicon Bilateral Voltage Triggered
Features
· Excellent capability of absorbing transient surge · Quick response to sur.
K2601 - 2SK2601
(Toshiba Semiconductor)
2SK2601
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2601
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low d.
K2604 - 2SK2604
(Toshiba Semiconductor)
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K2605 - 2SK2605
(Toshiba Semiconductor)
2SK2605
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2605
Switching Regulator Applications
Unit: mm
z Low drain−source .
K2607 - Silicon N-Channel FET
(Toshiba Semiconductor)
2SK2607
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2607
Chopper Regulator, DC−DC Converter and Moter Drive Applications.
K2608 - 2SK2608
(Toshiba Semiconductor)
2SK2608
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2608
Switching Regulator Applications
z Low drain−source ON resistan.
K2610 - 2SK2610
(Toshiba Semiconductor)
.DataSheet.co.kr
2SK2610
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2610
Chopper Regulator, DC−DC Converter and Mot.
K2611 - 2SK2611
(Toshiba Semiconductor)
2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit.
K2611 - Silicon N-Channel MOSFET
(Winsemi)
Features
■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junc.