K2611 Datasheet - Toshiba Semiconductor

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K2611 2SK2611

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2611 DC *DC Converter, Relay Drive and Motor Drive Ap.

K2611_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K2611

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

409.17 KB

Description:

2SK2611

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 1.1 Ω (typ. ) z High forward transfer admittance : |Yfs| = 7.0 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement
* mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25

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