Part number:
K2611
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
409.17 KB
Description:
2sk2611.
K2611_ToshibaSemiconductor.pdf
Datasheet Details
K2611_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
K2611
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
409.17 KB
Description:
2sk2611.
K2611, 2SK2611
2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2611 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating U
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