K2601 Datasheet, 2sk2601, Toshiba Semiconductor

K2601 Features

• 2sk2601 mical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws an

PDF File Details

Part number:

K2601

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

439.95kb

Download:

📄 Datasheet

Description:

2sk2601.

K2601 Application

• Applications z Low drain
• source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.56

TAGS

K2601

Toshiba Semiconductor

📁 Related Datasheet

K2600G - Sidac (JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd K0900G Series Sidac Rev.1.0 DESCRIPTION: The sidac is a silicon bilateral voltage triggered switch with greater p.

K2600G - Axial Leaded Silicon Bilateral Voltage Triggered (Sunmate)
K0900G - K2600G Axial Leaded Silicon Bilateral Voltage Triggered Features · Excellent capability of absorbing transient surge · Quick response to sur.

K2600S - Sidac (JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd K0900S Series Sidac Rev.1.0 DESCRIPTION: The sidac is a silicon bilateral voltage triggered switch with greater p.

K2604 - 2SK2604 (Toshiba Semiconductor)
.. .. .. .. .. .

K2605 - 2SK2605 (Toshiba Semiconductor)
2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source .

K2607 - Silicon N-Channel FET (Toshiba Semiconductor)
2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications.

K2608 - 2SK2608 (Toshiba Semiconductor)
2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2608 Switching Regulator Applications z Low drain−source ON resistan.

K2610 - 2SK2610 (Toshiba Semiconductor)
.DataSheet.co.kr 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2610 Chopper Regulator, DC−DC Converter and Mot.

K2611 - 2SK2611 (Toshiba Semiconductor)
2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Unit.

K2611 - Silicon N-Channel MOSFET (Winsemi)
Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junc.