K2601 Datasheet - Toshiba Semiconductor

K2601 2SK2601

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2601 DC DC Converter, Relay Drive and Motor Drive Applications z Low drain source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.56 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage .

K2601 Features

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K2601-ToshibaSemiconductor.pdf