Datasheet Details
- Part number
- K2601
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 439.95 KB
- Datasheet
- K2601-ToshibaSemiconductor.pdf
- Description
- 2SK2601
K2601 Description
2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2601 DC *DC Converter, Relay Drive and Motor Drive Appl.
K2601 Features
* export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
* Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use P
K2601 Applications
* z Low drain
* source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.56 Ω (typ. ) : |Yfs| = 7.0 S (typ. ) Unit: mm
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Char
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