K2601 Datasheet - Toshiba Semiconductor

K2601, 2SK2601

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2601 DC *DC Converter, Relay Drive and Motor Drive Appl.

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K2601-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K2601

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

439.95 KB

Description:

2SK2601

Features

* export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
* Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use P

Applications

* z Low drain
* source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.56 Ω (typ. ) : |Yfs| = 7.0 S (typ. ) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Char

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