K2608 Datasheet - Toshiba Semiconductor

K2608, 2SK2608

2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2608 Switching Regulator Applications z Low drain *so.

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K2608_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K2608

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

413.81 KB

Description:

2SK2608

Applications

* z Low drain
* source ON resistance : RDS (ON) = 3.73 Ω (typ. ) z High forward transfer admittance : |Yfs|= 2.6 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char

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