K2608 Datasheet - Toshiba Semiconductor

K2608 2SK2608

2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2608 Switching Regulator Applications z Low drain source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Drain

K2608 Datasheet (413.81 KB)