Datasheet Details
- Part number
- K2605
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 712.01 KB
- Datasheet
- K2605_ToshibaSemiconductor.pdf
- Description
- 2SK2605
K2605 Description
2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain.
K2605 Applications
* Unit: mm
z Low drain
* source ON resistance : RDS (ON) = 1.9 Ω (typ. )
z High forward transfer admittance : |Yfs| = 3.8 S (typ. )
z Low leakage current
: IDSS = 100 μA (max) (VDS = 640 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
C
📁 Related Datasheet
📌 All Tags