K2605 Datasheet - Toshiba Semiconductor

K2605, 2SK2605

2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain.

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K2605_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K2605

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

712.01 KB

Description:

2SK2605

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 1.9 Ω (typ. ) z High forward transfer admittance : |Yfs| = 3.8 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) C

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