K2605 Datasheet - Toshiba Semiconductor

K2605 2SK2605

2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Drai.

K2605_ToshibaSemiconductor.pdf