K2610
Toshiba ↗ Semiconductor
750.49kb
2sk2610.
TAGS
📁 Related Datasheet
K2611 - 2SK2611
(Toshiba Semiconductor)
2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit.
K2611 - Silicon N-Channel MOSFET
(Winsemi)
Features
■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junc.
K2611B - Silicon N-Channel MOSFET
(Winsemi)
K2611B Product Description
Silicon N-Channel MOSFET
Features
� 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switc.
K2613 - 2SK2613
(Toshiba Semiconductor)
..
2SK2613
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)
2SK2613
Switching Regulator Applications, DC-DC C.
K2614 - 2SK2614
(Toshiba)
2SK2614
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
2SK2614
Chopper Regulator, DC/DC Converter and Motor Drive Application.
K2617ALS - 2SK2617ALS
(Sanyo Semicon Device)
..
Ordering number : ENA0361A
2SK2617ALS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK2617ALS
Features
• • •
Gen.
K2600G - Sidac
(JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd
K0900G Series Sidac
Rev.1.0
DESCRIPTION:
The sidac is a silicon bilateral voltage triggered switch with greater p.
K2600G - Axial Leaded Silicon Bilateral Voltage Triggered
(Sunmate)
K0900G - K2600G
Axial Leaded Silicon Bilateral Voltage Triggered
Features
· Excellent capability of absorbing transient surge · Quick response to sur.
K2600S - Sidac
(JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd
K0900S Series Sidac
Rev.1.0
DESCRIPTION:
The sidac is a silicon bilateral voltage triggered switch with greater p.
K2601 - 2SK2601
(Toshiba Semiconductor)
2SK2601
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2601
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low d.