K2613 Datasheet - Toshiba Semiconductor

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K2613 2SK2613

www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC C.

K2613-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K2613

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

246.46 KB

Description:

2SK2613

Applications

* DC-DC Converter and Motor Drive Applications Unit: mm
* Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ. )
* High forward transfer admittance: ïYfsï = 6.0 S (typ. )
* Low leakage current: IDSS = 100 µA (max) (VDS = 800 V)
* Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID =

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