K2607 Datasheet - Toshiba Semiconductor

K2607 Silicon N-Channel FET

2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2607 Chopper Regulator, DC DC Converter and Moter Drive Applications Unit: mm z Low drain source ON-resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs|= 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit.

K2607-ToshibaSemiconductor.pdf