K2607 Datasheet - Toshiba Semiconductor

K2607, Silicon N-Channel FET

2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2607 Chopper Regulator, DC *DC Converter and Moter Dr.

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K2607-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K2607

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

444.44 KB

Description:

Silicon N-Channel FET

Applications

* Unit: mm z Low drain
* source ON-resistance : RDS (ON) = 1.0 Ω (typ. ) z High forward transfer admittance : |Yfs|= 7.0 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Char

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K2607 Silicon N-Channel FET Toshiba Semiconductor

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