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WFF630

Silicon N-Channel MOSFET

WFF630 Features

* 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V

* Ultra-low Gate Charge(Typical 22nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. Thi

WFF630 General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automot.

WFF630 Datasheet (687.91 KB)

Preview of WFF630 PDF

Datasheet Details

Part number:

WFF630

Manufacturer:

Winsemi

File Size:

687.91 KB

Description:

Silicon n-channel mosfet.

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WFF630 Silicon N-Channel MOSFET Winsemi

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