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WFF6N90

N-Channel MOSFET

WFF6N90 Features

* RDS(on) (Max 2.4 Ω )@VGS=10V

* Gate Charge (Typical 33nC)

* Improved dv/dt Capability, High Ruggedness

* 100% Avalanche Tested

* Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

WFF6N90 General Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, activ.

WFF6N90 Datasheet (103.38 KB)

Preview of WFF6N90 PDF

Datasheet Details

Part number:

WFF6N90

Manufacturer:

Wisdom technologies

File Size:

103.38 KB

Description:

N-channel mosfet.

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WFF6N90 N-Channel MOSFET Wisdom technologies

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