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WFU1N60

Silicon N-Channel MOSFET

WFU1N60 Features

* 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. T

WFU1N60 General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.

WFU1N60 Datasheet (579.44 KB)

Preview of WFU1N60 PDF

Datasheet Details

Part number:

WFU1N60

Manufacturer:

Winsemi

File Size:

579.44 KB

Description:

Silicon n-channel mosfet.

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WFU1N60 Silicon N-Channel MOSFET Winsemi

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