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WFU1N80

N-Channel MOSFET

WFU1N80 Features

* RDS(on) (Max 18.0 Ω )@VGS=10V

* Gate Charge (Typical 6.5nC)

* Improved dv/dt Capability, High Ruggedness

* 100% Avalanche Tested

* Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology

WFU1N80 General Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, activ.

WFU1N80 Datasheet (636.43 KB)

Preview of WFU1N80 PDF

Datasheet Details

Part number:

WFU1N80

Manufacturer:

Wisdom technologies

File Size:

636.43 KB

Description:

N-channel mosfet.

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WFU1N80 N-Channel MOSFET Wisdom technologies

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