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WFU20N06

Silicon N-Channel MOSFET

WFU20N06 Features

* 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V

* Ultra-low Gate Charge(Typical 6.1nC)

* High Current Capability

* 100%Avalanche Tested

* Maximum Junction Temperature Range(150℃) General Description This Power MO S FE T is produced using W in se m i ’s advanced planar stripe, This latest t

WFU20N06 General Description

This Power MO S FE T is produced using W in se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electro.

WFU20N06 Datasheet (595.30 KB)

Preview of WFU20N06 PDF

Datasheet Details

Part number:

WFU20N06

Manufacturer:

Winsemi

File Size:

595.30 KB

Description:

Silicon n-channel mosfet.

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WFU20N06 Silicon N-Channel MOSFET Winsemi

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