WFU4N60
Wisdom technologies
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N-channel mosfet.
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WFU4N60 - Silicon N-Channel MOSFET
(Winsemi)
Datasheet pdf - http://..net/
.DataSheet.co.kr
U4N60 WF WFU
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■.
WFU4N65S - Power MOSFET
(Winsemi)
WFU4N65S Product Description
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � R.
WFU430 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFD430/WFU430
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 1.4 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capab.
WFU1N60 - Silicon N-Channel MOSFET
(Winsemi)
Datasheet pdf - http://..net/
.DataSheet.co.kr
1N60 WFU WFU1
Silicon N-Channel MOSFET
Features
� � � � � 1.3A,600V,RDS(on)(Max 8.5Ω.
WFU1N60C - Power MOSFET
(Winsemi)
WFU1N60C Product Description
Silicon N-Channel MOSFET
Features
� 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Sw.
WFU1N60N - Silicon N-Channel MOSFET
(Winsemi)
Datasheet pdf - http://..net/
.DataSheet.co.kr
U1N6 0N WF WFU1N6 U1N60
Silicon N-Ch annel MOS FET Cha OSF
Features
■1A,600V, RDS(on.
WFU1N80 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFU1N80
N-Channel MOSFET
Features
■ RDS(on) (Max 18.0 Ω )@VGS=10V ■ Gate Charge (Typical 6.5nC) ■ Improved dv/dt Capability, H.
WFU20N06 - Silicon N-Channel MOSFET
(Winsemi)
WFU20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 1.
WFU2N60 - Silicon N-Channel MOSFET
(Winsemi)
Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 15.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junc.
WFU2N60 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capabili.