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WFU5N60B

Silicon N-Channel MOSFET

WFU5N60B Features

* 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this

WFU5N60B General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well full bridge resonant topology line a mode power sui.

WFU5N60B Datasheet (558.00 KB)

Preview of WFU5N60B PDF

Datasheet Details

Part number:

WFU5N60B

Manufacturer:

Winsemi

File Size:

558.00 KB

Description:

Silicon n-channel mosfet.

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WFU5N60B Silicon N-Channel MOSFET Winsemi

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