Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well full bridge resonant topology line a mode power
suited for half bridge and
electronic lamp ballast, high efficiency switched supplies, active power factor correction.Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ Tstg TL Drain
Features
- 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General.
WFU5N60B_Winsemi.pdf
