2SK211 - N-channel MOSFET
Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK211 Xiaosheng D Symbol Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, electronic switch.
SG Packag Electrical characteristics (Ta=25℃) 1-Drain 2-Gate 3-Source SOT-23 Parameter Symbl Conditions min typ max unit Drain to Source Voltage BVDS IDS= 1uA 20 V Gate to Drain ( Source) Voltage VGD(S) IGS= -1uA -20 V Gate to Source Cut-off Voltage VGS(off) V
