XP3P021H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3P021H Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic.
XP3P021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP3P021H
Manufacturer: YAGEO
File Size: 179.80 KB
Datasheet: XP3P021H-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID -30V 21mΩ -28.6A G D S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unles

XP3P021H Distributors

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XP3P021H N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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