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XP3P021M P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP3P021M Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requireme.
XP3P021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number
XP3P021M
Manufacturer
YAGEO
File Size
246.16 KB
Datasheet
XP3P021M-YAGEO.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3 D D D D SO-8 -30V 21mΩ -9A G S SS Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Ra

XP3P021M Distributors

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