XP3P021YT P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3P021YT Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requirem.
XP3P021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP3P021YT
Manufacturer: YAGEO
File Size: 241.41 KB
Datasheet: XP3P021YT-YAGEO.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) ID3 -30V 21mΩ -10A D D D D S S S G PMPAK® 3x3 Absolute Maximum Ratings@Tj=25oC(unless otherwise s

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XP3P021YT P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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