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XP3P7R0EI P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP3P7R0EI Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characte.
XP3P7R0E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number
XP3P7R0EI
Manufacturer
YAGEO
File Size
257.38 KB
Datasheet
XP3P7R0EI-YAGEO.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID HBM ESD -30V 7mΩ -54A 2KV The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. GD S TO-220CFM(I)

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