XP4509GM N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP4509GM Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performan.
XP4509 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP4509GM
Manufacturer: YAGEO
File Size: 228.01 KB
Datasheet: XP4509GM-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 30V 14mΩ 10A -30V 20mΩ -8.4A D2 The SO-8 package is widely preferred for all commercial- G1 G2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch S1 S2 applications. Absolute Maximum Rating

XP4509GM Distributors

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XP4509GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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