XP4P012LEH P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP4P012LEH Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characte.
XP4P012LE series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP4P012LEH
Manufacturer: YAGEO
File Size: 180.13 KB
Datasheet: XP4P012LEH-YAGEO.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID -40V 13.5mΩ -51A G D S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unles

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XP4P012LEH P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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