XP4P013EI P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP4P013EI Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristi.
XP4P013E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP4P013EI
Manufacturer: YAGEO
File Size: 258.17 KB
Datasheet: XP4P013EI-YAGEO.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID -40V 14.5mΩ -40A G DS TO-220CFM(I) Absolute

XP4P013EI Distributors

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XP4P013EI P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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